Obtaining advantages of a bracing in the case of a uv cure in the manufacture of replacement gate transistors

摘要

A method for forming a semiconductor structure includes a forming a stress-inducing layer over one or more partially field effect transistor (fet) units, which by means of a substrate, wherein said one or more partially fet-units victim-dummy-gate structure; a planarization of the stress-inducing layer and removal of the victim-dummy-gate structure; and in the connection to the planarization of the stress-inducing layer and to the removal of the victim-dummy-gate structure performing an ultraviolet (uv) hardening of the stress-inducing layer, in order to obtain a value of a through the stress inducing layer on channel regions of the one or more partially fet-structures output tension applied to increase.