A Phosphonic Acid Self‐assembled Monolayer on UV‐Cured Metal Oxides as Gate Dielectrics for Low‐Voltage Organic Field‐Effect Transistors

摘要

Herein, we report on the design, preparation, and electrical properties of organic/inorganic hybrid bilayer dielectric films via facile solution‐based fabrication at room temperature for the low‐voltage operation of organic field‐effect transistors (OFETs). The hybrid bilayer dielectric films are easily fabricated by a two‐step process involving ultraviolet curing of a sol–gel zirconium oxide and deposition of hydrophobic self‐assembled monolayers. These novel dielectrics exhibit great insulating properties (leakage current densities 10?6 A/cm2 at 2 V), high capacitances (500?nF/cm2), and ultra‐smooth surfaces (root‐mean‐square roughness 0.2 nm). Consequently, the hybrid dielectrics integrated into pentacene OFETs function at relatively low voltages (less than ?2.5 V) with great FET characteristics (mobility: 0.4 cm2/V?s, low subthreshold swing: down to 0.2 V/dec, on/off current ratio: 105).