A method for optimizing of a deposition process, a method for setting a depositioning plant and depositioning plant

摘要

A method for optimizing of a deposition process for producing an electrically conductive layer, preferably with a layer thickness of less than 20 nm by means of an electron beam or ion-beam-induced depositioning plant comprises, as the step 1, the selecting at least one deposition specific setting parameter to be optimized, such as an electron or ion beam parameters, the depositioning plant, wherein, if necessary, at least a further setting parameters of the depositioning plant is kept constant; as a step 2, the determination of a plurality of parameter values of the at least one setting parameter for defining a first generation parameter value population; in the form of step 3, the depositing a layer for each parameter value of the first generation parameter value population by means of the depositioning plant; as a step 4, the determination of an electrical parameter for each layer of each parameter value of the first generation parameter value population; as a step 5, the use of a genetic algorithm, which is a optimization assessment of the determined electrical characteristics with respect to a predetermined electrical target characteristic value and on the basis of the optimization assessment a further parameter value population second generation; and determined as a step 6, the repeating the steps of 3 to 5, under the accordance with the use of the parameter values of the second or, if appropriate, a further generation, to the electrical target characteristic value is reached or of the genetic algorithm for the as the last predetermined generation is completed.