首页> 外国专利> Transfer mask for structured vapor deposition of substrates, comprises transparent intermediate support, on rear face of which stack of layers having absorber layer of radiation-absorbing material, is arranged and continuous cover layer

Transfer mask for structured vapor deposition of substrates, comprises transparent intermediate support, on rear face of which stack of layers having absorber layer of radiation-absorbing material, is arranged and continuous cover layer

机译:用于衬底的结构化气相沉积的转移掩模,包括透明的中间支撑物,在其背面上布置有具有辐射吸收材料的吸收剂层的层的堆叠以及连续的覆盖层

摘要

Transfer mask (1) for structured vapor deposition of substrates, comprises a transparent intermediate support (2), on the rear face of which a stack of layers having an absorber layer (6) of a radiation-absorbing material, is arranged and a continuous cover layer (10) is arranged on top of support. A continuous evaporation layer (12) of the material to be evaporated is arranged on top of the cover layer. The evaporation layer can be evaporated only in sections in evaporation fields, in which the layer stack of the transfer mask comprises many spacers of the same height. Transfer mask (1) for structured vapor deposition of substrates, comprises a transparent intermediate support (2), on the rear face of which a stack of layers having an absorber layer (6) of a radiation-absorbing material, is arranged and a continuous cover layer (10) is arranged on top of support. A continuous evaporation layer (12) of the material to be evaporated is arranged on top of the cover layer. The evaporation layer can be evaporated only in sections in evaporation fields, in which the layer stack of the transfer mask comprises many spacers of the same height for adjusting a distance between the evaporation layers to a substrate to be coated in those evaporation-free regions of the evaporation layer, from which no vapor deposition of the substrate is performed. The spacers are formed in the absorber layer of the radiation-absorbing material, or a spacer layer or an intermediate layer within the layer stack. Independent claims are also included for: (1) producing a transfer mask, comprising depositing the individual layers of the layer stack one above the other and optionally structuring by subtractive process on a transparent intermediate support for the respective layer; (2) vapor deposition for locally differentiable evaporation of substrates by a transfer mask, comprising partially vaporizing at least one absorber layer and continuous evaporation of the material to be vaporized, where the evaporation material is vaporized locally by energy input into the absorber layer by radiation corresponding to the deposited structures and reflected locally on a transfer mask opposite substrate; and (3) an evaporating apparatus for locally differentiable evaporation of substrates with a transfer mask, comprising at least one absorber layer and a transparent intermediate support with which evaporation layer is only partially vaporized, a radiation source for energy input into the transfer mask by radiation and a holding device for holding the mask and transferring at least one of the substrate opposite to each other, and transfer mask, where at least one holding device has translation means for the translatory adjustment of the target-substrate distance.
机译:用于衬底的结构化气相沉积的转移掩模(1)包括透明的中间支撑物(2),其上布置有具有辐射吸收材料的吸收剂层(6)的层的堆叠,并且该连续的层是连续的覆盖层(10)布置在支撑的顶部上。待蒸发材料的连续蒸发层(12)布置在覆盖层的顶部上。蒸发层仅可以在蒸发场中的部分中蒸发,其中转移掩模的层堆叠包括许多相同高度的间隔物。用于衬底的结构化气相沉积的转移掩模(1)包括透明的中间支撑物(2),其上布置有具有辐射吸收材料的吸收剂层(6)的层的堆叠,并且该连续的层是连续的覆盖层(10)布置在支撑的顶部上。待蒸发材料的连续蒸发层(12)布置在覆盖层的顶部上。蒸发层只能在蒸发场中的各个部分中蒸发,其中转移掩模的叠层包括许多相同高度的间隔物,用于调节蒸发层与要涂覆的基材在这些无蒸发区域中的距离。蒸发层,从该蒸发层不进行基板的气相沉积。间隔物形成在辐射吸收材料的吸收层中,或者形成在叠层中的间隔物层或中间层中。还包括以下独立权利要求:(1)生产转移掩膜,包括将层堆叠的各个层一个接一个地沉积,以及可选地通过减法在相应层的透明中间载体上进行结构化; (2)通过沉积掩模通过局部沉积使衬底局部不同地蒸发的气相沉积,包括部分地蒸发至少一个吸收层并连续蒸发待蒸发的材料,其中蒸发材料通过通过辐射输入吸收层的能量而局部蒸发。对应于所沉积的结构并且在与基板相对的转移掩模上局部反射; (3)一种用于利用转移掩模对基板进行局部差异化蒸发的蒸发设备,其包括至少一个吸收层和透明的中间支撑体,利用该中间支撑体仅部分地蒸发了蒸发层,该辐射源用于通过辐射将能量输入到转移掩模中以及保持装置,其用于保持掩模并转印彼此相对的至少一个基板,以及转印掩模,其中至少一个保持装置具有用于平移调节目标基板距离的平移装置。

著录项

  • 公开/公告号DE102013206484A1

    专利类型

  • 公开/公告日2014-05-28

    原文格式PDF

  • 申请/专利权人 VON ARDENNE ANLAGENTECHNIK GMBH;

    申请/专利号DE201310206484

  • 发明设计人 BURGHART MARKUS;HAASEMANN GEORG;

    申请日2013-04-11

  • 分类号C23C14/04;

  • 国家 DE

  • 入库时间 2022-08-21 15:37:16

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