Circuit technology fdsoi with the distribution of the box, and means for biasing the ground planes of doping presents in a same casing opposite

摘要

The present invention relates to an integrated circuit (2) comprising a stack of a substrate semiconductor - conductor (sub), an insulating layer (bn2) and a semi - conductive layer, including: - a first electronic component (n2) formed: - a bias circuit configured to generate a first bias voltage; - the first (vn12) and second connections, receiving the first bias voltage; - a first isolation trench (47) separating the first electronic component (n2) of the first and second connections; - a first ground plane (lpg - n) with a first type of doping; - a first box (wl - p) with a second type of doping, opposite the first type, disposed in line with the first ground plane (lpg - n), and extending in the first isolation trench (47) and into contact with the second interconnection (vn11).