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NEUROMORPHIC SYSTEM UTILIZING THE INTRINSIC CHARACTERISTICS OF MEMORY CELLS

机译:利用记忆细胞内在特性的神经形态系统

摘要

The subject of the invention is a neuromorphic system comprising a set of at least one input neuron (503, 504, 507, 508), a set of at least one output neuron (505, 506) and a network of synaptic (502) implemented by a set of at least one variable resistance memory cell. Said synaptic network connects the input neurons (503, 504, 507, 508) to the output neurons (505, 506), the resistance of the memory cells being adjusted by sending writing pulses into the synaptic network ( 530, 531, 532, 533) generated by the input neurons and return pulses (514, 515) generated by the output neurons. The characteristics of the write and return pulses are deduced from the intrinsic characteristics of the memory cells so that the combination of a write pulse (530, 531, 532, 533) with a return pulse (514, 515 ) at the level of a memory cell results in a modification of its resistance according to a previously chosen learning rule.
机译:本发明的主题是一种神经形态系统,该神经形态系统包括一组至少一个输入神经元(503、504、507、508),一组至少一个输出神经元(505、506)以及实现的突触网络(502)。通过一组至少一个可变电阻存储单元。所述突触网络将输入神经元(503、504、507、508)连接到输出神经元(505、506),通过向突触网络(530、531、532、533中发送写入脉冲)来调节存储单元的电阻。由输入神经元产生)和由输出神经元产生的返回脉冲(514、515)。从存储单元的固有特性推导写入和返回脉冲的特性,以便在存储器级别将写入脉冲(530、531、532、533)与返回脉冲(514、515)组合在一起细胞会根据先前选择的学习规则改变其抵抗力。

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