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Single crystal diamond substrates for synthesis of single crystal diamond material

机译:用于合成单晶金刚石材料的单晶金刚石基底

摘要

A method of growing synthetic single crystal diamond material comprises: providing a single crystal diamond substrate; and growing synthetic single crystal diamond material on said single crystal diamond substrate, wherein said single crystal diamond substrate is formed of single crystal diamond material which is irradiated prior to growing synthetic single crystal diamond material thereon, and wherein the irradiation comprises irradiating the diamond material to a depth of 5µm or greater. The substrate may be formed from one of: single crystal synthetic HPHT material having a total equivalent isolated nitrogen concentration of 1-800 ppm; single crystal CVD diamond material have a total equivalent isolated nitrogen concentration of 0.005-100 ppm; or a natural diamond material having a total nitrogen concentration of 1-2000 ppm. The method may further comprise cooling the diamond material during the irradiation and annealing the diamond material. A composite substrate array for carrying out the method is also disclosed.
机译:一种生长合成单晶金刚石材料的方法,包括:提供单晶金刚石基底;在所述单晶金刚石衬底上生长合成单晶金刚石材料,其中所述单晶金刚石衬底由单晶金刚石材料形成,所述单晶金刚石材料在其上生长合成单晶金刚石材料之前被辐射,并且其中所述辐射包括将金刚石材料辐射至5μm或更大的深度。衬底可由以下各项之一形成:单晶合成HPHT材料,其总等效隔离氮浓度为1-800 ppm;以及单晶CVD金刚石材料的总等效隔离氮浓度为0.005-100 ppm;或总氮浓度为1-2000 ppm的天然金刚石材料。该方法可以进一步包括在辐照期间冷却金刚石材料并使金刚石材料退火。还公开了用于执行该方法的复合衬底阵列。

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