Mosfet switch gate driver, mosfet switch system and method

摘要

A gate driver (100), a high-side MOSFET switch system (200) and a method(300) of pulse-driven switching a MOSFET employ a Miller capacitance threshold. The gate driver (100) includes a gate discharge portion (110) to provide a first voltage for a first time period to a gate of a MOSFET (102). The first voltage is less than a turn-on threshold voltage of the MOSFET. The gate driver further includes a gate charge portion (120) to provide a second voltage for a second time period to the MOSFET gate. The second voltage is greater than the MOSFET turn-on threshold voltage. The second time period is less than a time period for a gate-source voltage of the MOSFET to exceed the Miller capacitance threshold. The method (300) of pulse-driven switching of a MOSFET includes applying (310) the first voltage and applying (320) the second voltage.