Cu-Ga-BASED SPUTTERING TARGET, METHOD OF MANUFACTURING THE TARGET, LIGHT ABSORBING LAYER AND SOLAR CELL USING THE LIGHT ABSORPTION LAYER

摘要

PROBLEM TO BE SOLVED: To provide a Cu-Ga-based target which when a Cu-In-Ga-Se(CIGS) quarternary light absorption film type solar cell is manufactured, does not require to separately make a layer for blocking diffusion of Na from a Na containing layer or a substrate, and allows for relatively uniformizing alkali metal concentration in a CIGS layer, and to provided a method of manufacturing the target, a light absorbing layer produced from the target, and a CIGS type solar cell using the light absorbing layer.SOLUTION: The Cu-Ga-based sputtering target containing alkali metal is provided in which a ratio of the number of Ga atoms to the total of the number of Ga and Cu atoms, (Ga/(Ga+Cu) is 0.2 - 0.6. The method of manufacturing the target and the solar cell formed by depositing a light absorbing layer using the target are also provided.