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NORMAL PRESSURE SINTERED SiC CERAMIC HAVING LOW ELECTRIC RESISTANCE
NORMAL PRESSURE SINTERED SiC CERAMIC HAVING LOW ELECTRIC RESISTANCE
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机译:低电阻的常压烧结碳化硅陶瓷
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摘要
PROBLEM TO BE SOLVED: To provide a normal pressure sintered SiC ceramic dense and having low electric resistance.SOLUTION: Provided is a normal pressure sintered SiC ceramic using, as starting raw material, SiC powder in which the content of Al is 0.06 wt% or higher, and in which the content of Al in the surface of the SiC powder by Auger electron spectroscopy or X-ray photoelectron spectroscopic analysis is 0.1 atom% or lower and B or BC and C(carbon) below 3 wt% as a sintering assistant, and in which bulk density is 3.00 or higher, also, open porosity is 2% or lower and specific resistance at room temperature is 100 &OHgr; cm or lower.
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