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NORMAL PRESSURE SINTERED SiC CERAMIC HAVING LOW ELECTRIC RESISTANCE

机译:低电阻的常压烧结碳化硅陶瓷

摘要

PROBLEM TO BE SOLVED: To provide a normal pressure sintered SiC ceramic dense and having low electric resistance.SOLUTION: Provided is a normal pressure sintered SiC ceramic using, as starting raw material, SiC powder in which the content of Al is 0.06 wt% or higher, and in which the content of Al in the surface of the SiC powder by Auger electron spectroscopy or X-ray photoelectron spectroscopic analysis is 0.1 atom% or lower and B or BC and C(carbon) below 3 wt% as a sintering assistant, and in which bulk density is 3.00 or higher, also, open porosity is 2% or lower and specific resistance at room temperature is 100 &OHgr; cm or lower.
机译:解决的问题:提供致密且低电阻的常压烧结SiC陶瓷。解决方案:提供一种以Al含量为0.06wt%或以下的SiC粉末为原料的常压烧结SiC陶瓷。更高,并且通过俄歇电子能谱或X射线光电子能谱分析在SiC粉末表面中的Al含量为0.1原子%或更低,并且B或BC和C(碳)低于3 wt%作为烧结助剂并且,其堆积密度为3.00或更高,开孔率为2%或更低,室温下的电阻率为100&OHgr;。厘米或更低。

著录项

  • 公开/公告号JP2015089862A

    专利类型

  • 公开/公告日2015-05-11

    原文格式PDF

  • 申请/专利权人 TOKAI KONETSU KOGYO CO LTD;

    申请/专利号JP20130230504

  • 发明设计人 KATO HIROYUKI;KITAHAMA HIROAKI;

    申请日2013-11-06

  • 分类号C04B35/565;H05B3/12;

  • 国家 JP

  • 入库时间 2022-08-21 15:35:23

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