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Pressureless sintering and oxidation resistance of zirconium diboride based ceramic composites.

机译:二硼化锆基陶瓷复合材料的无压烧结和抗氧化性。

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摘要

Specimens of ZrB2 containing various concentrations of B 4C, SiC, TaB2, and TaSi2 were pressureless-sintered and post-hot isostatic pressed to their theoretical densities. Oxidation resistances were studied by scanning thermogravimetry over the range 1150-1550°C. SiC additions improved oxidation resistance over a broadening range of temperatures with increasing SiC content. Tantalum additions to ZrB2-B 4C-SiC in the form of TaB2 and/or TaSi2 increased oxidation resistance over the entire evaluated spectrum of temperatures. TaSi 2 proved to be a more effective additive than TaB2. Silicon-containing compositions formed a glassy surface layer, covering an interior oxide layer.;This interior layer was less porous in tantalum-containing compositions. The oxidation resistances of ZrB2 containing SiC, TaB2, and TaSi2 additions of various concentrations was studied using isothermal thermogravimetry at 1200, 1400, and 1500°C, and specimens were further characterized using x-ray diffraction and electron microscopy. Increasing SiC concentration resulted in thinner glassy surface layers as well as thinner ZrO2 underlayers deficient in silica. This silica deficiency was argued to occur by a wicking process of interior-formed borosilicate liquid to the initially-formed borosilicate liquid at the surface. Small (3.32 mol%) concentrations of TaB2 additions were more effective at increasing oxidation resistance than equal additions of TaSi2. The benefit of these additives was related to the formation of zirconium-tantalum boride solid solution during sintering, which during oxidation, fragmented into fine particles of ZrO, and TaC. These particles resisted wicking of their liquid/glassy borosilicate encapsulation, which increased overall oxidation resistance. With increasing TaB2 or TaSi2 concentration, oxidation resistance degraded, most egregiously with TaB2 additions. In these cases, zirconia dendrites appeared to grow through the glassy layers, providing conduits for oxygen migration.
机译:对ZrB2的样品中含有各种浓度的B 4C,SiC,TaB2和TaSi2进行无压烧结,并对其进行热等静压,使其达到理论密度。通过在1150-1550℃范围内的扫描热重分析法研究了抗氧化性。 SiC的添加随着SiC含量的增加而在更宽的温度范围内提高了抗氧化性。在整个评估的温度范围内,以TaB2和/或TaSi2形式向ZrB2-B 4C-SiC中添加钽可提高抗氧化性。 TaSi 2被证明是比TaB2更有效的添加剂。含硅组合物形成玻璃状表面层,覆盖内部氧化物层。该内部层在含钽组合物中的孔隙较小。使用等温热重法在1200、1400和1500°C下研究了添加不同浓度的SiC,TaB2和TaSi2的ZrB2的抗氧化性,并使用X射线衍射和电子显微镜对样品进行了进一步表征。 SiC浓度的增加会导致玻璃表面层变薄,以及缺少二氧化硅的ZrO2底层变薄。据认为,这种二氧化硅不足是由于内部形成的硼硅酸盐液体在表面上芯吸形成初始形成的硼硅酸盐液体而发生的。少量(3.32 mol%)的TaB2添加物在增加抗氧化性方面比等量的TaSi2更有效。这些添加剂的好处与烧结过程中形成锆钛酸硼化物固溶体有关,在氧化过程中,它们会破碎成ZrO和TaC的细颗粒。这些颗粒抵抗了其液体/玻璃态硼硅酸盐封装的芯吸作用,从而增加了整体抗氧化性。随着TaB2或TaSi2浓度的增加,抗氧化性下降,添加TaB2的情况最严重。在这些情况下,氧化锆树枝状晶体似乎在玻璃层中生长,为氧气迁移提供了通道。

著录项

  • 作者

    Peng, Fei.;

  • 作者单位

    Georgia Institute of Technology.;

  • 授予单位 Georgia Institute of Technology.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 98 p.
  • 总页数 98
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 11:38:07

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