首页> 外国专利> LIQUID COMPOSITION FOR FORMING LEAD-FREE DIELECTRIC THIN FILM AND METHOD OF FORMING THE THIN FILM, AND LEAD-FREE DIELECTRIC THIN FILM FORMED BY THE METHOD

LIQUID COMPOSITION FOR FORMING LEAD-FREE DIELECTRIC THIN FILM AND METHOD OF FORMING THE THIN FILM, AND LEAD-FREE DIELECTRIC THIN FILM FORMED BY THE METHOD

机译:用于形成无铅介电薄膜的液体组合物和形成薄膜的方法,以及由该方法制成的无铅介电薄膜

摘要

PROBLEM TO BE SOLVED: To provide a liquid composition for forming a lead-free dielectric thin film having high dielectric constant by a chemical solution deposition method.;SOLUTION: The liquid composition for forming a lead-free dielectric thin film is a liquid composition for forming a lead-free dielectric thin film by a chemical solution deposition method and contains at least two of a BaTiO3 content, a Bi(Mg0.5Ti0.5)O3 content and a BiFeO3 content and is a composition in a first area surrounded by x=0.90 y=0.10, x=0.30 z=0.70, x=0.15 y=0.10 z=0.75 and x=0.30 y=0.70 in a ternary phase diagram of [BaTiO3] [Bi(Mg0.5Ti0.5)O3] [BiFeO3] where x[BaTiO3] y[Bi(Mg0.5Ti0.5)O3] z[BiFeO3] and x+y+z=1.;COPYRIGHT: (C)2015,JPO&INPIT
机译:解决的问题:提供一种通过化学溶液沉积法形成具有高介电常数的无铅电介质薄膜的液体组合物;解决方案:用于形成无铅电介质薄膜的液体组合物是用于通过化学溶液沉积法形成无铅电介质薄膜,并包含至少两种BaTiO 3 含量,Bi(Mg 0.5 Ti 0.5 < / Sub>)O 3 的含量和BiFeO 3 的含量,并且是由x = 0.90 y = 0.10,x = 0.30 z = 0.70,在[BaTiO 3 ] [Bi(Mg 0.5 Ti 0.5”的三元相图中,x = 0.15 y = 0.10 z = 0.75和x = 0.30 y = 0.70 )O 3 ] [BiFeO 3 ]其中x [BaTiO 3 ] y [Bi(Mg 0.5 Ti 0.5 )O 3 ] z [BiFeO 3 ] and x + y + z = 1 .;版权:(C)2015 ,JPO&INPIT

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