EPISUBSTRATES FOR SELECTIVE AREA GROWTH OF GROUP III-V MATERIAL AND METHOD FOR FABRICATING GROUP III-V MATERIAL ON SILICON SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for fabricating silicon substrates free of crystal defects with selective area growth of a Group III-V material layer.SOLUTION: The method comprises: providing a silicon substrate (101); forming a first layer (104) over the silicon substrate; patterning the first layer (104) to selectively expose the silicon substrate (101); forming a group III-V material layer (103) over the patterned first layer (104) and on the exposed area of the silicon substrate (101); and chemical mechanical polishing (CMP) the group III-V material layer (103) to expose the first layer (104) thereby forming a plurality of areas (106) suitable for growing a device layer on the silicon substrate (101).