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SELECTIVE SEED LAYER TREATMENT FOR FEATURE PLATING

机译:特色种子的选择性种子层处理

摘要

PROBLEM TO BE SOLVED: To provide a method of metallization in integrated circuits supporting smaller feature sizes.;SOLUTION: Conventional metallization processes fail at high density or small feature size patterns. For example, during patterning, dry films may collapse or lift-off, resulting in short circuits or open circuits in the metallization pattern. An exemplary method for metallization of integrated circuits includes forming features such as trenches, pads, and planes in a dielectric layer and depositing and selectively treating a seed layer in desired features of the dielectric layer. The treated regions of the seed layer may be used as a seed for electroless deposition of conductive material, such as copper, into the features. When the seed layer is of a catalytic ink, the seed layer may be treated by curing the catalytic ink with a laser.;COPYRIGHT: (C)2015,JPO&INPIT
机译:要解决的问题:提供一种支持较小特征尺寸的集成电路金属化方法;解决方案:传统的金属化工艺在高密度或较小特征尺寸的图形上失败。例如,在构图期间,干膜可能塌陷或剥离,导致金属化图案短路或断路。用于集成电路金属化的示例性方法包括在电介质层中形成诸如沟槽,焊盘和平面之类的特征,以及在电介质层的期望特征中沉积并选择性地处理种子层。种子层的经处理的区域可以用作用于将诸如铜的导电材料化学沉积到特征中的种子。当种子层是催化墨水时,可以通过用激光固化催化墨水来处理种子层。;版权所有:(C)2015,JPO&INPIT

著录项

  • 公开/公告号JP2015029133A

    专利类型

  • 公开/公告日2015-02-12

    原文格式PDF

  • 申请/专利权人 QUALCOMM INC;

    申请/专利号JP20140204632

  • 申请日2014-10-03

  • 分类号H01L21/3205;H01L21/768;H01L21/288;C23C18/31;C25D7/12;

  • 国家 JP

  • 入库时间 2022-08-21 15:34:13

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