首页> 外国专利> METHOD FOR MANUFACTURING POROUS SILICON OXYCARBIDE CERAMIC AND METHOD FOR MANUFACTURING POROUS SILICON OXYCARBIDE CERAMIC COMPOSITE MATERIAL

METHOD FOR MANUFACTURING POROUS SILICON OXYCARBIDE CERAMIC AND METHOD FOR MANUFACTURING POROUS SILICON OXYCARBIDE CERAMIC COMPOSITE MATERIAL

机译:制造多孔碳化硅陶瓷的方法及制造多孔碳化硅陶瓷复合材料的方法

摘要

PROBLEM TO BE SOLVED: To provide a method capable of simple and low-cost industrially large-scale production of porous silicon oxycarbide exhibiting excellent discharge capacity and cycle property (cycle maintenance rate) when used as an anode active material for a nonaqueous electrolyte secondary battery.SOLUTION: There is provided a method for manufacturing porous silicon oxycarbide by mixing a silicon-containing organic compound with a dispersion where a carbon-containing compound and a fine porous forming agent are dispersed to prepare a mixture, conducting a polymerization treatment of resulting mixture under a temperature condition at 0 to 200°C, primary firing the resulting production at a temperature of over 200°C and 800°C or less, pulverizing, classifying to prepare primary fired powder, and then second firing the primary fired powder under the temperature condition at over 800°C and 1150°C or less.
机译:解决的问题:提供一种能够简单且低成本地工业化生产多孔氧化碳的方法,当该多孔氧化碳用作非水电解质二次电池的负极活性物质时,其具有优异的放电容量和循环性能(循环维持率)。解决方案:提供了一种通过将含硅有机化合物与分散体混合来制造多孔碳氧化硅的方法,其中将含碳化合物和精细的多孔形成剂分散在其中以制备混合物,并对所得混合物进行聚合处理。在0到200°C的温度条件下,在200°C以上和800°C或更低的温度下初烧所得产品,进行粉碎,分类以制备初烧粉末,然后在25°C下二次烧制初烧粉末。超过800°C和1150°C或更低的温度条件。

著录项

  • 公开/公告号JP2015160762A

    专利类型

  • 公开/公告日2015-09-07

    原文格式PDF

  • 申请/专利权人 TOKAI CARBON CO LTD;

    申请/专利号JP20140035708

  • 发明设计人 HIRASAKI TETSURO;

    申请日2014-02-26

  • 分类号C01B31/36;H01M4/58;H01M4/36;C01B31/30;

  • 国家 JP

  • 入库时间 2022-08-21 15:34:07

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