首页> 外国专利> COPPER FOIL, COPPER-CLAD LAMINATE FOR SEMICONDUCTOR PACKAGE USING THE SAME, PRINTED WIRING BOARD, PRINTED CIRCUIT BOARD, RESIN SUBSTRATE, FORMATION METHOD OF CIRCUIT, SEMI-ADDITIVE PROCESS, CIRCUIT FORMATION SUBSTRATE FOR SEMICONDUCTOR PACKAGE, AND SEMICONDUCTOR PACKAGE

COPPER FOIL, COPPER-CLAD LAMINATE FOR SEMICONDUCTOR PACKAGE USING THE SAME, PRINTED WIRING BOARD, PRINTED CIRCUIT BOARD, RESIN SUBSTRATE, FORMATION METHOD OF CIRCUIT, SEMI-ADDITIVE PROCESS, CIRCUIT FORMATION SUBSTRATE FOR SEMICONDUCTOR PACKAGE, AND SEMICONDUCTOR PACKAGE

机译:铜箔,使用相同封装的半导体封装用覆铜箔层压板,印制线路板,印制电路板,树脂基质,电路形成方法,半导电过程,电路形成封装,半导体和导体

摘要

PROBLEM TO BE SOLVED: To provide a copper foil for a semi-additive process yielding, when laminated atop a resin substrate and then etched over the entire plane, a favorable adhesion force, with a plating film, of the etching surface of the resin substrate to which a copper foil surface profile has been transferred.;SOLUTION: The provided copper foil is a copper foil including: a copper foil bulk layer; a roughened layer formed atop the copper foil bulk layer; and a chromium-containing rustproof layer formed atop the roughened layer; the copper foil is laminated atop a resin substrate from the side of the surface possessing the roughened layer, and when the entire surface of the copper foil is etched by using an etchant, the Cr inclusion ratio (%) of a case where the respective weight concentrations (wt.%) of Cr, Zn, C, O, and Si on an occasion where the etched surface of the resin substrate following the entire surface etching is subjected to XPS surface analysis are defined respectively as A, B, C, D, and E [=A/(A+B+C+D+E)×100] is 0.1-10%.;COPYRIGHT: (C)2015,JPO&INPIT
机译:解决的问题:提供一种用于半添加工艺的铜箔,当将其层压在树脂基板上然后在整个平面上进行蚀刻时,会产生镀层对树脂基板蚀刻表面的有利附着力解决方案:提供的铜箔是一种铜箔,包括:一块铜箔块体层;在铜箔块体层的顶部形成粗糙层。在粗糙层顶上形成含铬防锈层。从具有粗糙化层的表面一侧将铜箔层压在树脂基板的顶部,并且当使用蚀刻剂蚀刻铜箔的整个表面时,各自重量的情况下Cr的夹杂率(%)将在整个表面蚀刻之后对树脂基板的蚀刻表面进行XPS表面分析时的Cr,Zn,C,O和Si的浓度(wt。%)分别定义为A,B,C,D ,E [= A /(A + B + C + D + E)×100]为0.1-10%。;版权所有:(C)2015,日本特许厅&INPIT

著录项

  • 公开/公告号JP2015007261A

    专利类型

  • 公开/公告日2015-01-15

    原文格式PDF

  • 申请/专利权人 JX NIPPON MINING & METALS CORP;

    申请/专利号JP20130121955

  • 发明设计人 ISHII MASASHI;

    申请日2013-06-10

  • 分类号C25D7/06;C23C28;C25D5/10;H05K3/38;H05K1/09;B32B15/01;H05K1/03;B32B15/088;B32B15/08;

  • 国家 JP

  • 入库时间 2022-08-21 15:33:58

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