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gas processing method, gas processing unit, forming method and the fine powder forming apparatus of fine powder

机译:气体处理方法,气体处理单元,细粉的形成方法和细粉形成设备

摘要

PROBLEM TO BE SOLVED: To remove a hydride of silicon from gas containing the hydride of silicon in a simpler manner than conventional ones while suppressing increase in costs.;SOLUTION: A gas treatment method removes the hydride of silicon from gas containing the hydride of silicon. The gas treatment method is adopted, which is characterized in that bubbles having a diameter of 10 μm or less and comprising the gas containing the hydride of silicon are brought into contact with water.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:在抑制成本增加的同时,以比传统方法更简单的方式从含硅氢化物的气体中除去硅的氢化物;解决方案:气体处理方法从含硅氢化物的气体中去除硅的氢化物。采用该气体处理方法,其特征在于使直径为10μm或更小的包含硅氢化物的气体的气泡与水接触。版权所有:(C)2013,JPO&INPIT

著录项

  • 公开/公告号JP5750337B2

    专利类型

  • 公开/公告日2015-07-22

    原文格式PDF

  • 申请/专利权人 大陽日酸株式会社;

    申请/专利号JP20110177432

  • 发明设计人 筑根 敦弘;石原 良夫;

    申请日2011-08-15

  • 分类号B01D53/14;B01D53/18;B01D53/46;B01D53/78;

  • 国家 JP

  • 入库时间 2022-08-21 15:31:26

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