said by reducing the patterning non-uniformity prior to deposit the threshold adjustment semiconductor alloy of semiconductor alloy reduction of the thickness variation

摘要

[MEANS FOR SOLVING PROBLEMS] By performing a plasma assisted etch process prior to executing the selective epitaxial growth process, the growth rate in the selective epitaxial growth process for depositing the threshold adjustment semiconductor alloys such as silicon / germanium alloy may be enhanced. For example, often, it is possible to simultaneously provide a device topography excellent during the subsequent growth process by which the mask layer is patterned on the basis of plasma assisted etch process down. Therefore, it can be can be deposited with high thickness uniformity of the threshold adjusting material, to reduce the threshold variation overall. [Selection Figure] Figure 2c