Modifications in Optoelectronic Behavior of Plasma-Deposited Amorphous Semiconductor Alloys Via Impurity Incorporation

摘要

Electronic properties of plasma-deposited a-Si:H alloys are discussed as functions of oxygen and nitrogen impurities. Over a wide range of processing conditions, features displayed by the data include: (1) anomalous behavior in photoconductivity versus temperature for films deficient in either, or both, impurities (peaks appear that are associated with thermal-quenching processes and supralinearity); (2) modification to classic behavior in photoconductivity owing to synergistic effects of oxygen and nitrogen. Correlations with photoluminescence are presented. Optical emission spectroscopy is discussed within the context of an emerging spectroscopy for the detection of emitting reactive species in the plasma. The presence of impurities, particularly N sub 2 , can be diagnosed. (ERA citation 04:055309)