The method of forming the polycrystalline silicon film, a substrate forming apparatus and a polycrystalline silicon film of a polycrystalline silicon film is formed.

摘要

PROBLEM TO BE SOLVED: To provide a method and a device of forming a polycrystalline silicon film that forms the polycrystalline silicon film with excellent characteristics in a short time, and a substrate having the polycrystalline silicon film formed thereon thereby.;SOLUTION: Silicon particulates are produced by heating a silicon evaporation source 15, transported, and jetted into a vacuum chamber 30 while carried with an air current of a supersonic free jet J to be physically vapor-deposited on a substrate 33 arranged in the vacuum chamber 30, thereby forming the polycrystalline silicon film of the silicon particulates.;COPYRIGHT: (C)2010,JPO&INPIT