crystallization index acquisition device and the crystallization index acquisition method

摘要

PROBLEM TO BE SOLVED: To easily and accurately acquire a crystallization index indicating a degree of crystallization in a microcrystal silicon film.;SOLUTION: In a crystallization index acquisition apparatus 1, a theoretical dielectric function of a microcrystal silicon film is represented as a combination of a plurality of partial dielectric function models and a crystallization index κ indicating a degree of crystallization in the microcrystal silicon film is set based on an amplitude of a high energy peak model contributed to a peak at a high energy side of an imaginary part in the dielectric function of a crystal silicon film among the plurality of partial dielectric function models. Then, each of parameters in a parameter group included in the plurality of partial dielectric function models is represented by the crystallization index κ, the value of each of parameters is changed by changing the crystallization index κ, and fitting of the theoretical dielectric function to a measured dielectric function acquired by a spectroscopic ellipsometer 3 is performed. Thus, the crystallization index κ of the microcrystal silicon film can be determined easily and accurately.;COPYRIGHT: (C)2012,JPO&INPIT