CRYSTALLIZATION-INDEX ACQUISITION DEVICE AND CRYSTALLIZATION-INDEX ACQUISITION METHOD

摘要

In this crystallization-index acquisition device (1), the theoretical dielectric function (93) of a microcrystalline-silicon film (5) is expressed as the composition of a plurality of partial dielectric-function models, and a crystallization index (κ) indicating the degree of crystallization of the microcrystalline-silicon film (5) is set on the basis of the amplitude of one of said partial dielectric-function models: namely, a high-energy-peak model (95) that contributes to a high-energy-side peak (92) in the imaginary part of the dielectric function of the crystalline-silicon film. Each of the parameters for the plurality of partial dielectric-function models is then expressed in terms of the crystallization index (κ), and by changing the parameter values by changing the crystallization index (κ), the theoretical dielectric function (93) is fitted to a measured dielectric function obtained by a spectroscopic ellipsometer. This makes it possible to easily and precisely obtain the crystallization index (κ) of the microcrystalline-silicone film (5).