Thin film INP-based solar cells using epitaxial lift-off

摘要

Single-junction or multi-junction InP-based growth grown lattice-matched on an InP substrate, or grown on a metamorphic layer on a GaAs substrate, where the substrate is later exfoliated in a non-destructive manner by epitaxial lift-off (ELO) techniques Disclosed are a solar cell manufacturing method and a device manufactured using the solar cell manufacturing method. [Selection] Figure 3