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Temperature gradient chemical vapor deposition (TGE-CVD)
Temperature gradient chemical vapor deposition (TGE-CVD)
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机译:温度梯度化学气相沉积(TGE-CVD)
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摘要
In order chemical vapor phase growth (CVD) the device, inside the chamber, to offer the temperature gradient profile of desire over the vertical dimension of baseplate or other processed ones, it is constituted in order to do temperature gradient type CVD operation by including the plural air heaters which are positioned. That way when it is constituted, using that chamber, parallel to the direction of temperature gradient with top down type or bottom-up type, controlling with the spread which passes through intermediate tunic, it is possible also to grow the thin film.
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