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Temperature gradient chemical vapor deposition (TGE-CVD)

机译:温度梯度化学气相沉积(TGE-CVD)

摘要

In order chemical vapor phase growth (CVD) the device, inside the chamber, to offer the temperature gradient profile of desire over the vertical dimension of baseplate or other processed ones, it is constituted in order to do temperature gradient type CVD operation by including the plural air heaters which are positioned. That way when it is constituted, using that chamber, parallel to the direction of temperature gradient with top down type or bottom-up type, controlling with the spread which passes through intermediate tunic, it is possible also to grow the thin film.
机译:为了使化学气相生长(CVD)装置在腔室内部提供所需的温度梯度分布,以在基板或其他已加工基底的垂直方向上提供尺寸,其构成为通过包括以下步骤来进行温度梯度型CVD操作:设置多个空气加热器。以此方式,当使用该腔室构成时,平行于自上而下型或自下而上型的温度梯度的方向,并控制通过中间上衣的扩散,也可以使薄膜生长。

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