A field effect transistor and a method of manufacturing a composite oxide having a perovskite type as the channel layer , a memory device using the same

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor that changes a resistance by injecting charges with high concentration into a channel using the electrical double layer method, and to provide a memory device using the field effect transistor as a switching device.;SOLUTION: The field effect transistor is formed from single crystal film, as a channel layer, comprised of complex oxide expressed in the following chemical formula: Ca_1-xCe_xMnO₃ (where, x is a real number satisfying 0≤x1).;COPYRIGHT: (C)2012,JPO&INPIT