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METHOD AND SYSTEM FOR PROVIDING A BULK PERPENDICULAR MAGNETIC ANISOTROPY FREE LAYER IN A PERPENDICULAR MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS
METHOD AND SYSTEM FOR PROVIDING A BULK PERPENDICULAR MAGNETIC ANISOTROPY FREE LAYER IN A PERPENDICULAR MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS
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机译:在自旋传递扭矩磁随机访问存储器应用中提供的垂直磁结中的大块垂直磁各向异性自由层的方法和系统
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摘要
A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer includes at least one of a hybrid perpendicular magnetic anisotropy (PMA) structure and tetragonal bulk perpendicular magnetic anisotropy (B-PMA) structure. At least one of the free layer and the pinned layer have a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
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