首页> 外国专利> MULTICRYSTALLINE SILICON BRICK AND SILICON WAFER THEREFROM

MULTICRYSTALLINE SILICON BRICK AND SILICON WAFER THEREFROM

机译:多晶硅砖和硅晶片

摘要

Present disclosure provides a multicrystalline silicon (mc-Si) brick, including a bottom portion starting from a bottom to a height of 100 mm, a middle portion starting from the height of 100 mm to a height of 200 mm; and a top portion starting from the height of 200 mm to a top. A percentage of incoherent grain boundary in the bottom portion is greater than a percentage of incoherent grain boundary in the top portion. Present disclosure also provides a multicrystalline silicon (mc-Si) wafer. The mc-Si wafer includes a percentage of non-Σ grain boundary from about 60 to about 75 and a percentage of Σ3 grain boundary from about 12 to about 25.
机译:本公开提供了一种多晶硅(mc-Si)砖,包括底部,该底部从底部开始至100mm的高度,中间部分从100mm的高度至200mm的高度;顶部从200毫米的高度开始到顶部。在底部的不连贯的晶界的百分比大于在顶部的不连贯的晶界的百分比。本公开还提供了一种多晶硅(mc-Si)晶片。 mc-Si晶片包含约60%至约75%的非Σ晶界和约12%至约25%的Σ3晶界。

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