An ultra-fast breakover diode has a turn on time TON that is less than 0.3 microseconds, where the forward breakover voltage is greater than +400 volts and varies less than one percent per ten degrees Celsius change. In another aspect of the invention, a breakover diode has a reverse breakdown voltage that is greater, in absolute magnitude, than the forward breakover voltage, where the forward breakover voltage is greater than +400 volts. Yet another aspect of the invention involves a string of series-connected breakover diode dice, along with a resistor string, in a packaged circuit. The packaged circuit acts like a single breakover diode having a large forward breakover voltage and a comparably large reverse breakdown voltage, even though the packaged circuit includes no discrete high voltage reverse breakdown diode. The packaged circuit is usable to supply a triggering current to a thyristor in a voltage protection circuit.
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机译：超快分断二极管的导通时间T ON 小于0.3微秒，其中正向分流电压大于+400伏，每十摄氏度的变化小于百分之一。在本发明的另一方面，一种分流二极管的反向击穿电压绝对值大于正向分流电压，其中正向分流电压大于+400伏。本发明的又一个方面涉及在封装电路中的一串串联的转换二极管管芯以及电阻器串。即使封装电路不包括分立的高压反向击穿二极管，封装电路的作用也像具有大的正向击穿电压和相对较大的反向击穿电压的单个击穿二极管一样。该封装电路可用于向电压保护电路中的晶闸管提供触发电流。
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