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TECHNIQUE FOR REDUCING PLASMA-INDUCED ETCH DAMAGE DURING THE FORMATION OF VIAS IN INTERLAYER DIELECTRICS BY MODIFIED RF POWER RAMP-UP
TECHNIQUE FOR REDUCING PLASMA-INDUCED ETCH DAMAGE DURING THE FORMATION OF VIAS IN INTERLAYER DIELECTRICS BY MODIFIED RF POWER RAMP-UP
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机译:通过改进的RF功率减小层间介电体中的通孔形成过程中减少等离子体诱发的沟槽损伤的技术
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摘要
When performing plasma assisted etch processes for patterning complex metallization systems of microstructure devices, the probability of creating plasma-induced damage, such as arcing, may be reduced or substantially eliminated by using a superior ramp-up system for the high frequency power and the low frequency power. To this end, the high frequency power may be increased at a higher rate compared to the low frequency power component, wherein, additionally, a time delay may be applied so that, at any rate, the high frequency component reaches its target power level prior to the low frequency component.
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