首页>
外国专利>
TECHNIQUES FOR FORMING ANGLED STRUCTURES FOR REDUCED DEFECTS IN HETEROEPITAXY OF SEMICONDUCTOR FILMS
TECHNIQUES FOR FORMING ANGLED STRUCTURES FOR REDUCED DEFECTS IN HETEROEPITAXY OF SEMICONDUCTOR FILMS
展开▼
机译:减少半导体膜异位表象中的缺陷的成角度结构的技术
展开▼
页面导航
摘要
著录项
相似文献
摘要
In one embodiment, a method for etching a substrate includes providing a reactive ambient around the substrate when a non-crystalline layer is disposed over a first crystalline material in the substrate; generating a plasma in a plasma chamber; modifying a shape of a plasma sheath boundary of the plasma; extracting ions from the plasma; and directing the ions to the substrate at a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, wherein the ions and reactive ambient are effective to form an angled cavity through the non-crystalline layer to expose a portion of the first crystalline material at a bottom of the angled cavity, and the angled cavity forms a non-zero angle of inclination with respect to the perpendicular.
展开▼