METHOD FOR FABRICATING NMOS AND PMOS TRANSISTORS ON A SUBSTRATE OF THE SOI, IN PARTICULAR FDSOI, TYPE AND CORRESPONDING INTEGRATED CIRCUIT

摘要

An integrated circuit includes an NMOS transistor and a PMOS transistor on different regions of an SOT substrate. Each transistor includes a gate region, multilayer lateral insulating regions against the sides of the gate region while also on the substrate. Each multilayer lateral insulating region includes an inclined portion sloping away from the substrate. Source and drain regions are on the substrate and are separated from the sides of the gate region by the corresponding multilayer lateral insulating region. The source and drain regions have an inclined portion resting against the inclined portion of the the lateral insulating region.