METHOD FOR PRODUCING NMOS AND PMOS TRANSISTORS ON A SOI-TYPE SUBSTRATE, ESPECIALLY FDSOI, AND CORRESPONDING INTEGRATED CIRCUIT

摘要

Integrated circuit comprising at least one NMOS transistor (TRN) and at least one PMOS transistor (TRP) on respective different zones (10, 11) of a silicon-on-insulator substrate, each transistor (TRP, TRN) ) comprising, above the substrate, a gate region (RGP, RGN) two multilayer side insulating regions (40-42, 50-52) respectively bearing on two sides of the gate region, resting on the substrate and each comprising a inclined portion (44, 54) flaring away from the substrate, a source region and a drain region each having a semiconductor block (6, 8) resting on the substrate, separated from the corresponding flank of the gate region by the corresponding lateral insulating region and having an inclined portion (60, 80) abutting the inclined portion (44, 54) of said insulating lateral region.