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VERTICAL FLOATING GATE NAND WITH OFFSET DUAL CONTROL GATES
VERTICAL FLOATING GATE NAND WITH OFFSET DUAL CONTROL GATES
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机译:具有偏置双控制门的垂直浮动门与非
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摘要
A method of making a monolithic three dimensional NAND string includes providing a stack of alternating insulating layers and control gate films over a major surface of a substrate. Each of the control gate films includes a middle layer located between a first control gate layer and a second control gate layer, the middle layer being a different material from the first and second control gate layers and from the insulating layers. The method also includes forming a front side opening in the stack, and forming a blocking dielectric, at least one charge storage region, a tunnel dielectric and a semiconductor channel in the front side opening in the stack.
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