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METHOD FOR SEPARATING GROWTH SUBSTRATE, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE, AND LIGHT-EMITTING DIODE MANUFACTURED USING METHODS

机译:分离生长基质的方法,制造发光二极管的方法以及使用该方法制造的发光二极管

摘要

Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures.
机译:公开了用于分离生长衬底的方法,用于制造发光二极管的方法以及发光二极管。根据一个实施方案,用于分离生长底物的方法包括:准备生长底物;在生长衬底上形成牺牲层和掩模图案;通过电化学蚀刻(ECE)蚀刻牺牲层;覆盖掩模图案,并形成多个氮化物半导体堆叠结构,所述多个氮化物半导体堆叠结构通过元件分离区域彼此分离;将支撑基板附接至多个半导体堆叠结构,其中,支撑基板具有连接至元件分离区域的多个通孔;将生长衬底与氮化物半导体堆叠结构分离。

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