SPINTRONIC LOGIC GATES EMPLOYING A GIANT SPIN HALL EFFECT (GSHE) MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT(S) FOR PERFORMING LOGIC OPERATIONS, AND RELATED SYSTEMS AND METHODS

摘要

Aspects described herein are related to spintronic logic gates employing a Giant Spin Hall Effect (GSHE) magnetic tunnel junction (MTJ) element(s) for performing logical operations. In one aspect, a spintronic logic gate is disclosed that includes a charge current generation circuit and a GSHE MTJ element. The charge current generation circuit is configured to generate a charge current representing an input bit set. The input bit set may include one or more input bit states for a logical operation. The GSHE MTJ element is configured to set a logical output bit state for the logical operation, and has a threshold current level. The GSHE MTJ element is configured to generate a GSHE spin current in response to the charge current and perform the logical operation on the input bit set by setting the logical output bit state based on whether the GSHE spin current exceeds the threshold current level.