Method of designing fin-based transistor for power optimization

摘要

A method of designing a fin-based transistor for power optimization includes following steps. A planar field-effect transistor (planar-FET) design including a plurality of planar semiconductor devices is received. An initial fin field-effect transistor (FinFET) design including a plurality of fin-based semiconductor devices corresponding to the planar semiconductor devices is generated. A timing analysis is performed to the initial FinFET design to recognize at least a critical path and at least a non-critical path in the initial FinFET design. The non-critical path includes at least one of the fin-based semiconductor devices. The fin-based semiconductor device on the non-critical path is adjusted and thus a refined FinFET design is generated. A current required by the refined FinFET design is lower than a current required by the initial FinFET design.