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Designing low-power and high-performance digital circuits with carbon nanotube transistors.

机译:使用碳纳米管晶体管设计低功耗和高性能数字电路。

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摘要

I have studied the use of carbon nanotube based field effect transistors (CNFETs) in high performance as well as low power digital VLSI systems. Analytical as well as numerical models of CNFETs have been developed and used in evaluating the performance-power trade-offs of CNFET based digital systems. Novel design techniques (e.g., multi-valued logic) have been proposed as possible supplements to the more traditional CMOS design style. A rigorous numerical study on the role of variations in CNT arrays show that an increased array density and the removal of all the metallic tubes are necessary for realizing practical CNFETs. Finally, tunneling CNFETs have also been investigated and shown to hold enormous promise for ultralow power VLSI design, both as computational elements and also for power gating in Si based systems.
机译:我研究了在高性能以及低功耗数字VLSI系统中使用基于碳纳米管的场效应晶体管(CNFET)。已经开发了CNFET的分析模型和数值模型,并用于评估基于CNFET的数字系统的性能-功率折衷。已经提出了新颖的设计技术(例如,多值逻辑)作为对更传统的CMOS设计风格的可能补充。对碳纳米管阵列中各种变化的作用进行的严格数值研究表明,增加阵列密度和去除所有金属管对于实现实用的CNFET是必不可少的。最后,还对隧道CNFET进行了研究并显示出其超低功耗VLSI设计的巨大前景,无论是作为计算元素还是基于Si的系统中的功率门控。

著录项

  • 作者

    Raychowdhury, Arijit.;

  • 作者单位

    Purdue University.$bElectrical and Computer Engineering.;

  • 授予单位 Purdue University.$bElectrical and Computer Engineering.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 166 p.
  • 总页数 166
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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