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Method and Apparatus for Non-Contact Measurement of Forward Voltage, Saturation Current Density, Ideality Factor and I-V Curves in P-N Junctions

机译:非接触式测量P-N结中正向电压,饱和电流密度,理想因子和I-V曲线的方法和设备

摘要

Non-contact measurement of one or more electrical response characteristics of a p-n junction includes illuminating a surface of the p-n junction with light of a first intensity having a modulation or pulsed characteristic sufficient to establish a steady-state condition in a junction photovoltage (JPV) of the p-n junction, measuring a first JPV from the p-n junction within the illumination area, illuminating the surface of the p-n junction with light of an additional intensity, measuring an additional photovoltage from the portion of the p-n junction within the illumination area, determining a photocurrent density of the p-n junction at the first intensity. The non-contact measurement further includes determining the forward voltage, the saturation current density, the ideality factor or one or more I-V curves with the measured first photovoltage, the measured additional photovoltage and/or the determined photocurrent density of the p-n junction.
机译:pn结的一个或多个电响应特性的非接触式测量包括:使用具有足以在结光电压(JPV)中建立稳态条件的调制或脉冲特性的第一强度的光照射pn结的表面。 pn结的强度,测量照射区域内pn结的第一个JPV,用附加强度的光照射pn结的表面,测量pn结在照射区域内的部分的附加光电压,确定pn结在第一强度下的光电流密度。非接触式测量还包括利用测得的第一光电压,测得的附加光电压和/或测得的p-n结的正向电压,饱和电流密度,理想因子或一个或多个I-V曲线来确定。

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