Suppression of crystal growth instabilities during production of rare-earth oxyorthosilicate crystals

摘要

Disclosed are a method of growing a rare-earth oxyorthosilicate crystal and a crystal grown using the method. A melt is prepared by melting a first substance including at least one rare-earth element and a second substance including at least one element from group 7 of the periodic table. A seed crystal is brought into contact with the surface of the melt and withdrawn to grow the crystal.