Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, and an n-type ZnO based compound semiconductor laminate structure

摘要

A method for producing a p-type ZnO based compound semiconductor layer including the steps of (a) supplying (i) Zn, (ii) O, (iii) optional Mg, and (iv) a Group 11 element which is Cu and/or Ag to form a Mg_xZn_1-xO (0≦x≦0.6) single crystal film doped with the Group 11 element; (b) supplying at least one Group 13 element selected from the group consisting of B, Ga, Al, and In on the Mg_xZn_1-xO (0≦x≦0.6) single crystal film; (c) alternately carrying out the steps (a) and (b) to form a laminate structure; and (d) annealing the laminate structure to form a p-type Mg_xZn_1-xO (0≦x≦0.6) layer co-doped with the Group 11 element and the Group 13 element.