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Modeling charge distribution on FinFET sidewalls
Modeling charge distribution on FinFET sidewalls
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机译:模拟FinFET侧壁上的电荷分布
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摘要
A method is provided for modeling charge distribution on FinFET sidewalls for estimating variability in device performance. The method includes: inputting structure parameters and simulation parameters for a FinFET structure; identifying a semiconductor-oxide interface in the structure, the interface including a plurality of atomic steps and a plurality of trapped charges; distributing charges at the interface; and performing device simulations and current-voltage analysis upon generating all samples of given number of devices.
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