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Critical dimension and pattern recognition structures for devices manufactured using double patterning techniques
Critical dimension and pattern recognition structures for devices manufactured using double patterning techniques
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机译:使用双图案化技术制造的设备的关键尺寸和图案识别结构
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摘要
An illustrative test structure is disclosed herein that includes a plurality of first line features and a plurality of second line features. In this embodiment, each of the second line features have first and second opposing ends and the first and second line features are arranged in a grating pattern such that the first ends of the first line features are aligned to define a first side of the grating structure and the second ends of the first features are aligned to define a second side of the grating structure that is opposite the first side of the grating structure. The first end of the second line features has a first end that extends beyond the first side of the grating structure while the second end of the second line features has a first end that extends beyond the second side of the grating structure.
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