Field effect transistor using graphene, phosphorus-doped graphene, and methods of producing the same

摘要

A field effect transistor using a channel layer including a phosphorus-doped graphene and a method of fabricating the same are provided. Further, a phosphorus-doped graphene and a method of producing the same are provided. The field effect transistor includes: a source electrode and a drain electrode formed on a substrate; and a channel layer comprising a phosphorus-doped graphene, the channel layer electrically connected to the source electrode and the drain electrode.