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Structure and method for thermal treatment with epitaxial SiCP thermal stability improvement
Structure and method for thermal treatment with epitaxial SiCP thermal stability improvement
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机译:改善外延SiCP热稳定性的热处理结构和方法
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摘要
The present disclosure provides a method for making an integrated circuit in one embodiment. The method includes providing a semiconductor substrate having an active region and a first gate stack disposed on the semiconductor substrate in the active region; forming in-situ phosphorous-doped silicon carbide (SiCP) features on the semiconductor substrate and disposed on sides of the first gate stack; replacing the first gate stack with a second gate stack having a high k dielectric material layer; and thereafter performing a millisecond annealing (MSA) process with a thermal profile having a first thermal wavelet and a second thermal wavelet.
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