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System and a method for designing a hybrid memory cell with memristor and complementary metal-oxide semiconductor
System and a method for designing a hybrid memory cell with memristor and complementary metal-oxide semiconductor
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机译:用于设计具有忆阻器和互补金属氧化物半导体的混合存储单元的系统和方法
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摘要
The embodiments herein relates to a hybrid non-volatile memory cell system and architecture for designing integrated circuits. The system comprises CMOS access transistor connected to a memristor which stores a data based on a resistance. The system has a word line for accessing the hybrid memory and two bit lines carrying data of mutually opposite values for transferring a data from the memory. The two terminals of the transistor are connected respectively to a first terminal of the memristor and to a first bit line. The gate terminals of the transistors are coupled together to form a word line. The access transistors control the two bit lines during a read and write operation. A control logic performs a read and write operation with the hybrid memory cells. The memory architecture prevents a power leakage during data storage and controls a drift in a state during a read process.
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