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Methods and systems for selectively forming metal layers on lead frames after die attachment

机译:在芯片附着后在引线框架上选择性地形成金属层的方法和系统

摘要

Methods and systems are disclosed for selectively forming metal layers on lead frames after die attachment to improve electrical connections for areas of interest on lead frames, such as for example, lead fingers and down-bond areas. By selectively forming metal layers on areas of interest after die attachment, the disclosed embodiments help to eliminate anomalies and associated defects for the lead frames that may be caused by the die attachment process. A variety of techniques can be utilized for selectively forming one or more metal layers, and a variety of metal materials can be used (e.g., nickel, palladium, gold, silver, etc.). Further, cleaning can also be performed with respect to the areas of interest prior to selectively forming the one or more metal layers on areas of interest for the leaf frame.
机译:公开了用于在管芯附接之后在引线框上选择性地形成金属层的方法和系统,以改善引线框上感兴趣的区域(例如,引线指和下粘结区)的电连接。通过在芯片附接之后在感兴趣的区域上选择性地形成金属层,所公开的实施例有助于消除可能由芯片附接过程引起的引线框架的异常和相关的缺陷。可以使用多种技术来选择性地形成一个或多个金属层,并且可以使用多种金属材料(例如,镍,钯,金,银等)。此外,还可以在对叶片框架感兴趣的区域上选择性地形成一个或多个金属层之前,对感兴趣的区域进行清洁。

著录项

  • 公开/公告号US9076783B2

    专利类型

  • 公开/公告日2015-07-07

    原文格式PDF

  • 申请/专利权人 RAMA I. HEGDE;

    申请/专利号US201313849460

  • 发明设计人 RAMA I. HEGDE;

    申请日2013-03-22

  • 分类号H01L23/495;

  • 国家 US

  • 入库时间 2022-08-21 15:17:37

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