Memory arrays with a memory cell adjacent to a smaller size of a pillar having a greater channel length than a memory cell adjacent to a larger size of the pillar and methods

摘要

The disclosure is related to memory arrays and methods. One such memory array has a substantially vertical pillar. A memory cell adjacent to the pillar where the pillar has a first size has a greater channel length than a memory cell adjacent to the pillar where the pillar has a second size larger than the first size.