GaN dual field plate device with single field plate metal

摘要

A low leakage current transistor (2) is provided which includes a GaN-containing substrate (11-14) covered by a passivation surface layer (17) in which a T-gate electrode with sidewall extensions (20) is formed and coated with a multi-level passivation layer (30-32) which includes an intermediate etch stop layer (31) which is used to define a continuous multi-region field plate (33) having multiple distances between the bottom surface of the field plate 33 and the semiconductor substrate in the gate-drain region of the transistor.