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Group III-nitrides on Si substrates using a nanostructured interlayer
Group III-nitrides on Si substrates using a nanostructured interlayer
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机译:使用纳米结构中间层在Si衬底上形成III族氮化物
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摘要
A layered group III-nitride article includes a single crystal silicon substrate, and a highly textured group III-nitride layer, such as GaN, disposed on the silicon substrate. The highly textured group III-nitride layer is crack free and has a thickness of at least 10 μm. A method for forming highly textured group III-nitride layers includes the steps of providing a single crystal silicon comprising substrate, depositing a nanostructured InxGa1-xN (1≧x≧0) interlayer on the silicon substrate, and depositing a highly textured group III-nitride layer on the interlayer. The interlayer has a nano indentation hardness that is less than both the silicon substrate and the highly textured group III-nitride layer.
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机译:层状III族氮化物制品包括单晶硅衬底和布置在硅衬底上的高度织构的III族氮化物层,例如GaN。高度织构的III族氮化物层是无裂纹的并且具有至少10μm的厚度。一种形成高度织构的III族氮化物层的方法包括以下步骤:提供包含单晶硅的衬底,沉积纳米结构的In x Sub> Ga 1-x Sub> N(1≥ x≥0)在硅衬底上形成中间层,并在中间层上沉积高度织构的III族氮化物层。中间层的纳米压痕硬度小于硅衬底和高度织构的III族氮化物层。
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