Copper alloy for electronic/electric device, copper alloy thin plate for electronic/electric device, method of producing copper alloy for electronic/electric device, conductive component for electronic/electric device and terminal

摘要

What is provided is a copper alloy for electronic/electric device comprising: in mass %, more than 2% and 36.5% or less of Zn; 0.1% or more and 0.9% or less of Sn; 0.05% or more and less than 1.0% of Ni; 0.001% or more and less than 0.10% of Fe; 0.005% or more and 0.10% or less of P; and the balance Cu and inevitable impurities, wherein a content ratio of Fe to Ni, Fe/Ni satisfies 0.002≦Fe/Ni1.5, a content ratio of a sum of Ni and Fe, (Ni+Fe), to P satisfies 3(Ni+Fe)/P15, a content ratio of Sn to a sum of Ni and Fe, (Ni+Fe) satisfies 0.3Sn/(Ni+Fe)5, an average crystal grain diameter of α phase containing Cu, Zn, and Sn is in a range of 0.1 to 50 μm, and the copper alloy includes a precipitate containing P and one or more elements selected from Fe and Ni.